NXP Semiconductors KMZ41,118

NXP Semiconductors KMZ41,118

Quantity: 214,675

Manufacturer: NXP Semiconductors

Date Code: TBD

KMZ41,118 is a TrenchFET® Gen II P-Channel MOSFET manufactured by NXP Semiconductors. It has a maximum drain-source voltage of 110V, a maximum drain current of 41A and a maximum gate-source voltage of ±20V. It is available in a TO-220 package.

Key Features

  • TrenchFET® Gen II technology
  • Low on-resistance
  • Fast switching speed
  • Low gate charge
  • Avalanche rugged
  • ESD protected

Applications

  • Load switching
  • Motor control
  • Power conversion
  • Uninterruptible power supplies (UPS)
  • Telecom power supplies

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